Figure 13From: Numerical simulation of ISFET structures for biosensing devices with TCAD toolsDrain current as a function of the number of charged receptors - 0 V. Drain current as a function of the number of charged receptors: coloured circles in each column (e.g. for the same number of charged receptors) correspond to different random position combinations (V DS = 100mV, V REF = 0V).Back to article page